General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process.It has been optimized for power management applications reguiring a wide range of gave drive voltage ratings(4.5V—25V).

Applications

Power management

Load switch

Battery protection

Features

-5.3V—30V

Low gate charge

Fast switching speed

High performance trench technology for extremely low R_DS[ON]

High power and current handing capability